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| Type | Description |
|---|---|
| rohs: | RoHS |
| fet type: | N-Channel |
| vgs (max): | ±18V |
| technology: | GaNFET (Gallium Nitride) |
| fet feature: | - |
| part status: | Obsolete |
| mounting type: | Surface Mount |
| package / case: | 4-PowerDFN |
| vgs(th) (max) @ id: | 2.5V @ 250µA |
| operating temperature: | -55°C ~ 175°C (TJ) |
| rds on (max) @ id, vgs: | 350mOhm @ 5.5A, 8V |
| power dissipation (max): | 65W (Tc) |
| supplier device package: | 4-PQFN (8x8) |
| gate charge (qg) (max) @ vgs: | 9.3 nC @ 4.5 V |
| drain to source voltage (vdss): | 600 V |
| input capacitance (ciss) (max) @ vds: | 760 pF @ 480 V |
| drive voltage (max rds on, min rds on): | 10V |
| current - continuous drain (id) @ 25°c: | 9A (Tc) |
