Type | Description |
---|---|
rohs: | RoHS |
fet type: | N-Channel |
vgs (max): | +20V, -5V |
technology: | SiC (Silicon Carbide Junction Transistor) |
fet feature: | - |
part status: | Active |
mounting type: | Through Hole |
package / case: | TO-247-4 |
vgs(th) (max) @ id: | 2.9V @ 1.9mA |
operating temperature: | -55°C ~ 175°C (TJ) |
rds on (max) @ id, vgs: | 195mOhm @ 10A, 20V |
power dissipation (max): | 138W (Tc) |
supplier device package: | TO-247-4 |
gate charge (qg) (max) @ vgs: | 43 nC @ 20 V |
drain to source voltage (vdss): | 1200 V |
input capacitance (ciss) (max) @ vds: | 885 pF @ 800 V |
drive voltage (max rds on, min rds on): | 20V |
current - continuous drain (id) @ 25°c: | 20A (Tc) |