Type | Description |
---|---|
rohs: | RoHS |
fet type: | N-Channel |
vgs (max): | +7.5V, -12V |
technology: | GaNFET (Gallium Nitride) |
fet feature: | - |
part status: | Active |
mounting type: | Surface Mount |
package / case: | Die |
vgs(th) (max) @ id: | 1.2V @ 3.5mA |
operating temperature: | -55°C ~ 150°C (TJ) |
rds on (max) @ id, vgs: | - |
power dissipation (max): | - |
supplier device package: | Die |
gate charge (qg) (max) @ vgs: | 3.3 nC @ 6 V |
drain to source voltage (vdss): | 650 V |
input capacitance (ciss) (max) @ vds: | 123 pF @ 400 V |
drive voltage (max rds on, min rds on): | 6V |
current - continuous drain (id) @ 25°c: | 15A |