Type | Description |
---|---|
rohs: | RoHS |
fet type: | N-Channel |
vgs (max): | +6V, -4V |
technology: | GaNFET (Gallium Nitride) |
fet feature: | - |
part status: | Active |
mounting type: | Surface Mount |
package / case: | 4-SMD, No Lead |
vgs(th) (max) @ id: | 2.8V @ 600µA |
operating temperature: | -55°C ~ 150°C (TJ) |
rds on (max) @ id, vgs: | 404mOhm @ 4A, 5V |
power dissipation (max): | - |
supplier device package: | 4-SMD |
gate charge (qg) (max) @ vgs: | 2.6 nC @ 5 V |
drain to source voltage (vdss): | 300 V |
input capacitance (ciss) (max) @ vds: | 450 pF @ 150 V |
drive voltage (max rds on, min rds on): | 5V |
current - continuous drain (id) @ 25°c: | 4A (Tc) |