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| Type | Description |
|---|---|
| rohs: | RoHS |
| fet type: | N-Channel |
| vgs (max): | +7V, -4V |
| technology: | GaNFET (Gallium Nitride) |
| fet feature: | - |
| part status: | Active |
| mounting type: | Surface Mount |
| package / case: | 4-SMD, No Lead |
| vgs(th) (max) @ id: | 2.5V @ 140µA |
| operating temperature: | -55°C ~ 150°C (TJ) |
| rds on (max) @ id, vgs: | 580mOhm @ 1A, 5V |
| power dissipation (max): | - |
| supplier device package: | 4-SMD |
| gate charge (qg) (max) @ vgs: | - |
| drain to source voltage (vdss): | 60 V |
| input capacitance (ciss) (max) @ vds: | 22 pF @ 30 V |
| drive voltage (max rds on, min rds on): | 5V |
| current - continuous drain (id) @ 25°c: | 1A (Tc) |
